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BUK76 Dataheets PDF



Part Number BUK76
Manufacturers NXP
Logo NXP
Description (BUK75 / BUK76) TrenchMOS standard level FET
Datasheet BUK76 DatasheetBUK76 Datasheet (PDF)

www.DataSheet4U.com BUK75/76/7E04-40A TrenchMOS™ standard level FET Rev. 02 — 7 November 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7504-40A in SOT78 (TO-220AB); BUK7604-40A in SOT404 (D2-PAK); BUK7E04-40A in SOT226 (I2-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Standard level compatible. 3. Applicati.

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www.DataSheet4U.com BUK75/76/7E04-40A TrenchMOS™ standard level FET Rev. 02 — 7 November 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7504-40A in SOT78 (TO-220AB); BUK7604-40A in SOT404 (D2-PAK); BUK7E04-40A in SOT226 (I2-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Standard level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Description gate (g) mb mb Simplified outline mb Symbol d drain (d) source (s) mounting base, connected to drain (d) 1 MBK106 g s MBB076 2 3 MBK116 1 2 3 1 2 3 MBK112 SOT78 (TO-220AB) SOT404 (D2-PAK) SOT226 (I2-PAK) DataSheet 4 U .com www.DataSheet4U.com Philips Semiconductors BUK75/76/7E04-40A TrenchMOS™ standard level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 25 °C Tj = 175 °C 3.9 − 4.5 8.5 mΩ mΩ [1] Symbol Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Typ − − − − Max 40 198 300 175 Unit V A W °C 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM WDSS peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) peak reverse drain current non-repetitive avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; VDS ≤ 40 V; VGS = 10 V; RGS = 50 Ω; starting Tmb = 25 °C [1] [2] [1] [2] [2] Conditions RGS = 20 kΩ Min − − − − − − − − −55 −55 − − − − Max 40 40 ±20 198 75 75 794 300 +175 +175 198 75 794 1.6 Unit V V V A A A A W °C °C A A A J Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Source-drain diode Avalanche ruggedness [1] [2] Current is limited by power dissipation chip rating Continuous current is limited by package 9397 750 09059 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 02 — 7 November 2001 2 of 15 DataSheet 4 U .com www.DataSheet4U.com Philips Semiconductors BUK75/76/7E04-40A TrenchMOS™ standard level FET 120 Pder (%) 100 03na19 200 ID (A) 150 03ne93 80 60 100 40 50 Capped at 75 A due to package 20 0 0 25 50 75 100 125 150 175 200 Tmb (ºC) 0 25 50 75 100 125 150 175 200 Tmb (ºC) P tot P der = ---------------------- × 100 % P ° tot ( 25 C ) VGS ≥ 4.5 V Fig 1. Norma.


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