RSM002P03

www.DataSheet4U.com RSM002P03 Transistors 4V Drive Pch MOS FET RSM002P03 zStructure Silicon P-channel MOS FET zExternal dimensions (Unit : mm) VMT3 zFeatures 1) Low On-resistance. 2) Small package (VMT3). 3) 4V drive. (1)Gate (2)Source (3) 0.2 0.22 (1)(2) 0.8 1.2 0.4 0.4 0.8 0.13 0.5 (3)Drain Abbreviated symbol : WP zApplications Switching zPackaging specifications Package Type RSM002P03 Code Basic ordering unit (pieces) Taping T2L 8000 zInner circuit (3) (1) ∗2 ∗1 0.2 1.2 0.32 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 P D ∗2 Tch Tstg Limits −30 ±20 ±0.2 ±0.4 0.15 150 −55 to +150 Unit V V A A W °C °C zThermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a recommended land Symbol Rth(ch-a) ∗ Limits 833 Unit °C/W 1/2 DataSheet 4 U .com www.DataSheet4U.com RSM002P03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 IDSS Zero gate voltage drain current − VGS (th) −1.0 Gate threshold voltage − Static drain-source on-state RDS (on)∗ − resistance − Yfs ∗ 0.2 Forward transfer admittance Ciss − Input capacitance Coss − Output...