SBFP540M

www.DataSheet4U.com Ordering number : ENN7494A SBFP540M NPN Epitaxial Planar Silicon Transistor SBFP540M Features UHF to C Band Low Noise Amplifier, Low Phase Noise Oscillation Applications Low noise : NF=0.9dB typ (f=1.8GHz). High cut-off frequency : fT=20GHz typ (VCE=1V). : fT=29GHz typ (VCE=4V). Low voltage operation. High Gain : S21e2=18.5dB typ (f=1.8GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 14 4.5 1 80 250 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT(1) fT(2) Cre 2 S21e (1) 2 S21e   (2) Conditions VCB=5V, IE=0 VEB=1V, IC=0 VCE=3.5V, IC=20mA VCE=1V, IC=10mA VCE=4V, IC=50mA VCB=2V, f=1MHz VCE=1V, IC=10mA, f=1.8GHz VCE=2V, IC=20mA, f=1.8GHz VCE=2V, IC=5mA, f=1.8GHz Ratings min typ max 200 70 50 20 22 29 0.14 17.5 16 18.5 0.9 1.3 0.24 200 Unit nA µA GHz GHz pF dB dB dB NF Marking : MC Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control sys...