BD645

www.DataSheet4U.com BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD645 Collector-base voltage (IE = 0) BD647 BD649 BD651 BD645 Collector-emitter voltage (IB = 0) BD647 BD649 BD651 Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE 80 100 120 140 60 80 100 120 5 8 12 0.3 62.5 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω, ...