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2SA1091. A1091 Datasheet

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2SA1091. A1091 Datasheet






A1091 2SA1091. Datasheet pdf. Equivalent




A1091 2SA1091. Datasheet pdf. Equivalent





Part

A1091

Description

2SA1091

Manufacture

Toshiba Semiconductor

Datasheet
Download A1091 Datasheet


Toshiba Semiconductor A1091

A1091; www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .


Toshiba Semiconductor A1091

.


Toshiba Semiconductor A1091

.



Part

A1091

Description

2SA1091

Manufacture

Toshiba Semiconductor

Datasheet
Download A1091 Datasheet




 A1091
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1091
2SA1091
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
High voltage: VCBO = 300 V, VCEO = 300 V
Low saturation voltage: VCE (sat) = 0.5 V (max)
Small collector output capacitance: Cob = 6 pF (typ.)
Complementary to 2SC2551.
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
300
V
Collector-emitter voltage
VCEO
300
V
Emitter-base voltage
VEBO 8 V
Collector current
IC
100
mA
Base current
Collector power dissipation
Junction temperature
Storage temperature range
IB 20 mA
PC 400 mW
Tj 150 °C
Tstg
55~150
°C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.21 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
V (BR) CBO
V (BR) CEO
VCB = −300 V, IE = 0
VEB = −8 V, IC = 0
IC = −0.1 mA, IE = 0
IC = −1 mA, IB = 0
hFE (1)
VCE = −10 V, IC = −20 mA
(Note)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCE = −10 V, IC = −1 mA
IC = −20 mA, IB = −2 mA
IC = −20 mA, IB = −2 mA
VCE = −10 V, IC = −20 mA
VCB = −20 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 30~90 O: 50~150
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
300
V
300
V
30 150
20 ⎯ ⎯
⎯ ⎯ −0.5 V
⎯ ⎯ −1.2 V
40 60 MHz
6
8 pF
1 2007-11-01





 A1091
2SA1091
2 2007-11-01





 A1091
2SA1091
3 2007-11-01



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