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BUV48, BUV48A NPN SILICON POWER TRANSISTORS
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Rugged Triple-Diffused Planar Construction 15 A...
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BUV48, BUV48A
NPN SILICON POWER
TRANSISTORS
● ● ●
Rugged Triple-Diffused Planar Construction 15 A Continuous Collector Current 1000 Volt Blocking Capability
B
SOT-93 PACKAGE (TOP VIEW) 1
C
2
E
3 Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING Collector-emitter voltage (VBE = 0 V) Collector-emitter voltage (RBE = 10 Ω) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current Non repetitive accidental peak surge current Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A SYMBOL VCES VCER VCEO IC ICM IB IBM ICSM Ptot Tj Tstg VALUE 850 1000 850 1000 400 450 15 30 4 20 55 125 -65 to +150 -65 to +150 UNIT V V V A A A A A W °C °C
PRODUCT
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INFORMATION
1
AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BUV48, BUV48A
NPN SILICON POWER
TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER VCEO(sus) Collector-emitter sustaining voltage Collector-emitter cut-off current IC = 200 mA VCE = 850 V ICES VCE = 1000 V VCE = 850 V VCE = 1000 V VCE = 850 V ICER Collector-emitter cut-off curre...