POWER TRANSISTOR. BUT11 Datasheet


BUT11 TRANSISTOR. Datasheet pdf. Equivalent


BUT11


NPN SILICON POWER TRANSISTOR
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BUT11 NPN SILICON POWER TRANSISTOR

● ● ●

Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current
B C E
1 2 3 TO-220 PACKAGE (TOP VIEW)

Pin 2 is in electrical contact with the mounting base.
MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. SYMBOL VCBO VCES V CEO VEBO IC ICM Ptot Tj Tstg VALUE 850 850 400 10 5 10 100 -65 to +150 -65 to +150 UNIT V V V V A A W °C °C

PRODUCT
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INFORMATION
1

MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

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BUT11 NPN SILICON POWER TRANSISTOR
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) ft Cob Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwid...



BUT11
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BUT11
NPN SILICON POWER TRANSISTOR
Rugged Triple-Diffused Planar Construction
100 W at 25°C Case Temperature
5 A Continuous Collector Current
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp 10 ms, duty cycle 2%.
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
Ptot
Tj
Tstg
VALUE
850
850
400
10
5
10
100
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
W
°C
°C
PRODUCT INFORMATION
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
DataSheet4 U .com
1

BUT11
www.DataSheet4U.com
BUT11
NPN SILICON POWER TRANSISTOR
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
VCEO(sus) sustaining voltage
IC = 0.1 A L = 25 mH
(see Note 2)
400
ICES
IEBO
Collector-emitter
cut-off current
Emitter cut-off
current
VCE = 850 V
VCE = 850 V
VEB = 10 V
VBE = 0
VBE = 0
IC = 0
TC = 125°C
50
500
1
Forward current
hFE transfer ratio
VCE = 5 V IC = 0.5 A
(see Notes 3 and 4)
20 60
Collector-emitter
VCE(sat) saturation voltage
IB = 0.6 A
IC = 3 A
(see Notes 3 and 4)
1.5
Base-emitter
VBE(sat) saturation voltage
IB = 0.6 A
IC = 3 A
(see Notes 3 and 4)
1.3
Current gain
ft bandwidth product VCE = 10 V IC = 0.5 A
f = 1 MHz
12
Cob Output capacitance VCB = 20 V IE = 0
f = 0.1 MHz
110
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
µA
mA
V
V
MHz
pF
thermal characteristics
RθJC
PARAMETER
Junction to case thermal resistance
MIN TYP MAX UNIT
1.25 °C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
tsv Voltage storage time IC = 3 A
tfi Current fall time
VCC = 50 V
tsv Voltage storage time IC = 3 A
tfi Current fall time
VCC = 50 V
IB(on) = 0.6A
(see Figures 1 and 2)
IB(on) = 0.6A
TC = 100°C
VBE(off) = -5 V
VBE(off) = -5 V
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1.4 µs
150 ns
1.5 µs
300 ns
2
DataSheet4 U .com
PRODUCT INFORMATION
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.




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