POWER TRANSISTOR. BUX84 Datasheet

BUX84 TRANSISTOR. Datasheet pdf. Equivalent


Part BUX84
Description NPN SILICON POWER TRANSISTOR
Feature www.DataSheet4U.com BUX84 NPN SILICON POWER TRANSISTOR ● ● ● ● ● 40 W at 25°C Case Temperature 2 .
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BUX84
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BUX84
NPN SILICON POWER TRANSISTOR
40 W at 25°C Case Temperature
2 A Continuous Collector Current
3 A Peak Collector Current
Typical tf = 200 ns at 25°C
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp 2 ms, duty cycle 2%.
SYMBOL
VCBO
VCES
VCEO
IC
ICM
Ptot
Tj
Tstg
VALUE
800
800
400
2
3
40
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
W
°C
°C
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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BUX84
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BUX84
NPN SILICON POWER TRANSISTOR
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-emitter
VCEO(sus) sustaining voltage
IC = 0.1 A L = 25 mH
(see Note 2)
400 V
ICES
IEBO
Collector-emitter
cut-off current
Emitter cut-off
current
VCE = 800 V
VCE = 800 V
VEB = 5 V
VBE = 0
VBE = 0
IC = 0
TC = 125°C
0.2
mA
1
1 mA
Forward current
hFE transfer ratio
VCE = 5 V IC = 0.1 A
(see Notes 3 and 4)
35
VCE(sat)
VBE(sat)
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
IB = 0.03 A IC = 0.3 A
IB = 0.2 A IC = 1 A
IB = 0.2 A IC = 1 A
(see Notes 3 and 4)
(see Notes 3 and 4)
0.8
V
1
1.1 V
Current gain
ft bandwidth product VCE = 10 V IC = 0.2 A
12 MHz
Cob Output capacitance VCB = 20 V IE = 0
f = 0.1 MHz
60 pF
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
5. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
thermal characteristics
RθJC
PARAMETER
Junction to case thermal resistance
MIN TYP MAX UNIT
2.5 °C/W
resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ton Turn on time
ts Storage time
tf Fall time
tf Fall time
IC = 1 A
VCC = 250 V
IC = 1 A
VCC = 250 V
IB(on) = 0.2 A
IB(off) = -0.4 A
(see Figures 1 and 2)
IB(on) = 0.2 A
TC = 95°C
IB(off) = -0.4 A
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.25 0.5
1.8
0.2
µs
µs
µs
0.4 µs
2
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PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.







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