BUX85

www.DataSheet4U.com BUX85 NPN SILICON POWER TRANSISTOR ● ● ● ● 40 W at 25°C Case Temperature 2 A Continuous Collector Current 3 A Peak Collector Current Typical tf = 200 ns at 25°C B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. SYMBOL VCBO VCES V CEO IC ICM Ptot Tj Tstg VALUE 1000 1000 450 2 3 40 -65 to +150 -65 to +150 UNIT V V V A A W °C °C PRODUCT DataSheet 4 U .com INFORMATION 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BUX85 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) ft Cob NOTES: 2. 3. 4. 5. Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance IC = 0.1 A TEST CONDITIONS L = 25 mH VBE = 0 VBE = 0 IC = 0 IC = 0....