2SK3077

www.DataSheet4U.com 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Unit: mm l Output Power l Gain l Drain Efficiency : PO = 15.0 dBmW (Min.) : GP = 15.0 dB (Min.) : ηD = 20% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDSS VGSS ID PD* Tch Tstg RATING 10 5 0.1 0.1 150 −45~150 UNIT V V A W °C °C *: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB JEDEC JEITA TOSHIBA — — 2−2K1D MARKING 1 DataSheet 4 U .com 2001-12-26 www.DataSheet4U.com 2SK3077 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Output Power Drain Efficiency Power Gain Threshold Voltage Drain Cut-off Current Gate-Source Leakage Current SYMBOL PO ηD GP Vth IDSS IGSS TEST CONDITION VDS = 4.8V Iidle = 43 mA (VGS = adjust) f = 915 MHz, Pi = 0 dBmW VDS = 4.8 V, ID = 0.5 mA VDS = 10 V, VGS = 0 V VGS = 5 V, VDS = 0 V MIN 15.0 — 15.0 0.25 — — TYP. — 20.0 — — — — MAX — — — 1.25 10 5 UNIT dBmW % dB V µA µA CAUTION This transistor is the electrostatic sensitive device. Please handle with caution. RF OUTPUT POWER TEST FIXTURE 2 DataSheet 4 U .com 2001-12-26 www.DataSheet4U.com 2SK3077 CAUTION These are only typical curves and devices are not necessarily guaranteed at these curves. 3 DataSheet 4 U .com 2001-12-26 www.DataSheet4U.com 2SK3077 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continua...