www.DataSheet4U.com
NPN Silicon Phototransistor Type OT 410D and OT 410T
The OT410 sensors consist of a high gain NPN s...
www.DataSheet4U.com
NPN Silicon Photo
transistor Type OT 410D and OT 410T
The OT410 sensors consist of a high gain
NPN silicon photo
transistor mounted in hermetically sealed TO-46 package. These sensors are ideally suited for hostile environment operation. The OT410D features a domed lens and the OT410T a flat window.
TO - 46 Package Hermetically Sealed Device ideal for hostile
environments High Sensitivity
Dimensions in mm
Specifications:
Operating Temperature Range -55°C to 125°C
PARAMETERS Light Current H = 1mW/cm2 OT 410D(T)-1 OT 410D(T)-2 OT 410D(T)-3 Dark Current VCE = 10V, H = 0 Collector Emitter Voltage Emitter Collector Voltage Saturation Voltage IC = 1mA Angular Response Rise or Fall Time RL = 100Ω V CC = 10V OT 410D OT 410T OT 410D-1 OT 410D-6
SYMBOL MIN. 3 (1.5) I C(ON) I CED V CED V ECD V CE(SAT) 35 6 5 (2) 12 (4)
TYP MAX. 15 (6) 40
UNITS mA mA mA nA V V
0.50 20 80 6 8
V Deg. Deg. µS µS
Φ t r, tf
Tel: +44 (0) 870 608 1188 Fax: +44 (0) 870 241 2255 Germany: +49 (0) 692 199 8606 Fax: +49 (0) 692 199 8595 Email:
[email protected] Website: www.rhopointcomponents.com
Rhopoint Components Ltd
DataSheet 4 U .com
...