HCP10C60

www.DataSheet4U.com Shantou Huashan Electronic Devices Co.,Ltd. HCP10C60 Silicon Controlled Rectifier ¨€ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=10A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type ¨€ General Description Standard gate triggering SCR is suitable for the application where requiring high bi-directional blocking voltage capability and also suitable for over voltage protection,motor control cicuit in power tool,inrush current limit circuit and heating control system. ¨€ Absolute Maximum Ratings£¨ Ta=25¡æ unless otherwise specified £© T s t g ¡ ª ¡ ªStorage Temperature ------------------------------------------------------ - 40~125¡æ Tj ¡ ª ¡ ªOperating Junction Temperature ---------------------------------------------- - 40~125¡æ Peak Off-State Voltage -------------------------------------------------------------------- 600V VDRM ¡ª¡ªRepetitive IT £¨ RMS£© ¡ª¡ª R.M.S On-State Current£¨ 180º Conduction Angles£© ---------------------------------------- 10A IT(AV) ¡ª¡ª Average On-State Current (Half Sine Wave : TC = 111 ° C) ----------------------------------------6.4A ITSM 2 ¡ª¡ª Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------- 110A 60A2 s 5W I t ¡ª¡ª Circuit Fusing Considerations(t = 8.3ms) -----------------------------------------------------------PGM ¡ª¡ªForward Peak Gate Power Dissipation (Ta=25¡æ ) -------------------------------------------...