HCP12C60

www.DataSheet4U.com Shantou Huashan Electronic Devices Co.,Ltd. HCP12C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=12A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type █ General Description Standard gate triggering SCR is suitable for the application where requiring high bi-directional blocking voltage capability and also suitable for over voltage protection,motor control cicuit in power tool,inrush current limit circuit and heating control system. █ Absolute Maximum Ratings（Ta=25℃ unless otherwise specified） T s t g —— Storage Temperature ------------------------------------------------------ - 40~125 ℃ T j —— Operating Junction Temperature ---------------------------------------------- - 40~125 ℃ VDRM ——Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V IT（RMS）——R.M.S On-State Current（180º Conduction Angles）---------------------------------------- 12A IT(AV) ——Average On-State Current (Half Sine Wave : TC = 109 °C) ----------------------------------------7.6A ITSM ——Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------- 132A I2t ——Circuit Fusing Considerations(t = 8.3ms) -----------------------------------------------------------87A2s 5W PGM ——Forward Peak Gate Power Dissipation (Ta=25℃) --------------------------------------------------- PG(AV) ——Forward Average Gate Power Dissipation ...