IRF4000

www.DataSheet4U.com PD - 97056 IRF4000 HEXFET® Power MOSFET Applications l IEEE 802.3af Compliant PoE Switch in Power Sourcing Equipment VDSS 100V Features l l l l l l 270m:@VGS = 12V 2.4A 350m:@VGS = 10V ' ' ' ' RDS(on) max ID Exceeds IEEE 802.3af PoE requirements Rugged planar technology with large SOA Very Low Leakage at 100V (1.5µA max) Fully characterized avalanche voltage and current Thermally enhanced Saves space: replaces 4 discrete MOSFETs * 6 * 6 * 6 * 6 5mm x 10mm Power MLP IRF4000 ISOMETRIC Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 100 ± 30 2.4 1.9 19 3.5 0.028 8.6 -55 to + 150 Units V A c Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range W W/°C V/ns °C Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) Typ. Max. 1.5 36 Units °C/W f ––– ––– Notes  through … are on page 7 www.irf.com 1 10/07/05 www.DataSheet4U.com IRF4000 Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forw...