IEEE 802.3af Compliant PoE Switch
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PD - 97056
IRF4000
HEXFET® Power MOSFET
Applications
l
IEEE 802.3af Compliant PoE Switch in Power...
Description
www.DataSheet4U.com
PD - 97056
IRF4000
HEXFET® Power MOSFET
Applications
l
IEEE 802.3af Compliant PoE Switch in Power Sourcing Equipment
VDSS
100V
Features
l l l l l l
270m:@VGS = 12V 2.4A 350m:@VGS = 10V
' ' ' '
RDS(on) max
ID
Exceeds IEEE 802.3af PoE requirements Rugged planar technology with large SOA Very Low Leakage at 100V (1.5µA max) Fully characterized avalanche voltage and current Thermally enhanced Saves space: replaces 4 discrete MOSFETs
* 6 * 6 * 6 * 6
5mm x 10mm Power MLP
IRF4000 ISOMETRIC
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
100 ± 30 2.4 1.9 19 3.5 0.028 8.6 -55 to + 150
Units
V A
c
Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range
W W/°C V/ns °C
Thermal Resistance
Parameter
RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount)
Typ.
Max.
1.5 36
Units
°C/W
f
––– –––
Notes through
are on page 7
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1
10/07/05
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IRF4000
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forw...
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