HEXFET Power MOSFET
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PD - 94982
IRF9Z24NPbF
•
Lead-Free
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02/05/04
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2
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Description
www.DataSheet4U.com
PD - 94982
IRF9Z24NPbF
Lead-Free
www.irf.com
1
02/05/04
www.DataSheet4U.com
IRF9Z24NPbF
2
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IRF9Z24NPbF
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3
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4
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5
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6
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Peak Diode Recovery dv/dt Test Circuit
D.U.T *
+
+
Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer
-
+
RG VGS dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-channel HEXFETS
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TO-220AB Package Outline
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
Dimensions are shown in millimeters (inches)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- SOURCE 3- EMITTER 4 - DRA...
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