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PD - 94390
IRLI3615
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 150V
G S
RDS(on) = 0.085 Ω ID = 14A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
14
9.8 56 45 0.30 ±16 340 8.4 4.5 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case Junction-to-Ambient
Typ.
––– –––
Max.
3.3 65
Units
°C/W
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IRLI3615
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. Typ. Max. Units Conditions 150 ––– ––– V VGS = 0V, ID = 250µA ––– 0.18 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.085 VGS = 10V, ID = 8.4A ––– ––– 0.095 Ω VGS = 5.0V, ID = 8.4A 1.0 ––– 2.0 V VDS = VGS, ID = 250µA 14 ––– ––– S VDS = 50V, ID = 8.4A ––– ––– 25 VDS = 150V, VGS = 0V µA ––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C ––– ––– 100 VGS = 16V nA ––– ––– -100 VGS = -16V ––– ––– 140 ID = 8.4A ––– ––– 9.5 nC VDS = 120V ––– ––– 53 VGS = 10V, See Fig. 6 and 13 ––– 8.3 ––– VDD = 75V ––– 20 ––– ID = 8.4A ns ––– 110 ––– RG = 6.2Ω, VGS = 10V ––– 53 ––– RD = 8.9Ω, See Fig. 10 Between lead, ––– 4.5 ––– 6mm (0.25in.) nH from package ––– 7.5 ––– G and center of die contact ––– 1600 ––– VGS = 0V ––– 290 ––– pF VDS = 25V ––– 150 ––– ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Q rr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol ––– ––– 14
showing the A G integral reverse ––– ––– 56 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 8.4A, VGS = 0V ––– 180 270 ns TJ = 25°C, IF = 8.4A ––– 1130 1700 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 9.5mH RG = 25Ω, I AS = 8.4A. (See Figure 12) ISD ≤ 8.4A, di/dt ≤ 510A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4.
2
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IRLI3615
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
10
10
2.7V
2.7V
1 0.1
20µs PULSE WIDTH T = 25 C
J ° 1 10 100
1 0.1
20µs PULSE WIDTH T = 175 C
J ° 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.5
I D , Drain-to-Source Current (A)
TJ = 25 ° C TJ = 175 ° C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = .