TPCS8303

www.DataSheet4U.com TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPCS8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) High forward transfer admittance: |Yfs| = 18 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement mode: Vth = −0.45~−1.2 V (VDS = −10 V, ID = −200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating −20 −20 ±12 −5 −20 1.1 W 0.75 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-3R1E Drain power dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Single-device operation (Note 3a) Weight: 0.035 g (typ.) 0.6 W 0.35 Circuit Configuration 8 7 6 5 16.3 −5 0.075 150 −55~150 mJ A mJ °C °C 1 2 3 4 Note 1, Note 2, Note 3, Note 4, Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please hand...