VEC2305

www.DataSheet4U.com Ordering number : ENN7718 VEC2305 VEC2305 Features P-Channel Silicon MOSFET General-Purpose Switching Device Applications For load switches, DC / DC converters. 1.8V drive. Composite type with 2 P-Channel MOSFETs (MCH3319) contained in a singlepackage, facilitaing high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --12 ±8 --2.5 --10 0.9 1.0 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=--1mA, VGS=0 VDS=-12V, VGS=0 VGS=±6.4V, VDS=0 VDS=-6V, ID=--1mA VDS=-6V, ID=--1.5A ID=--1.5A, VGS=-4.5V ID=--0.8A, VGS=-2.5V ID=--0.4A, VGS=-1.8V VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz Ratings min --12 --10 ±10 --0.3 2.7 4.5 87 122 162 450 100 85 115 172 275 --1.0 typ max Unit V µA µA V S mΩ mΩ mΩ pF pF...