Supertex inc.
N-Channel Depletion-Mode Vertical DMOS FETs
DN3535
Features
►► High input impedance ►► Low input capacit...
Supertex inc.
N-Channel Depletion-Mode Vertical DMOS FETs
DN3535
Features
►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage
Applications
►► Normally-on switches ►► Solid state relays ►► Converters ►► Linear amplifiers ►► Constant current sources ►► Power supply circuits ►► Telecom
General Description
This low threshold depletion-mode (normally-on)
transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar
transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Ordering Information
Part Number Package Option Packing
DN3535N8-G TO-243AA (SOT-89) 2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings
Parameter
Value
Product Summary
BVDSX/BVDGX
RDS(ON)
(max)
350V
10Ω
Pin Configuration
DRAIN
...