GK001T

www.DataSheet4U.com Ordering number : ENN7781 GK001T GK001T Features N-Channel GTBT Switching Regulator Applications Adoption of process GTBT (Grounded-Trench-MOS assisted Bipolar-mode Field Effect Transistor). High breakdown voltage and high reliablity. High speed switching. Wide ASO. Low saturation voltage, low On resistance : RCE(sat)=280mΩ (at 1A). High hFE (typ : 1000). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC ICP IB PC Tj Tstg PW≤300µs, Duty cycle≤10% Conditions Ratings 600 600 7 2 4 1 0.8 Tc=25°C 22 150 --55 to +150 Unit V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES IEBO hFE1 hFE2 hFE3 Cob VCE(sat) VBE(sat) VCB=500V, IE=0 VCE=500V, RBE=0 VEB=6V, IC=0 VCE=5V, IC=50mA VCE=5V, IC=400mA VCE=5V, IC=1.2A VCB=10V, f=1MHz IC=1A, IB=0.2A IC=1A, IB=0.2A 500 35 12 7.2 280 1.1 560 1.5 pF mV V Conditions Ratings min typ max 10 10 10 1500 Unit µA µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require ext...