HAT1072H

HAT1072H Silicon P Channel Power MOS FET Power Switching Features Capable of –4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 3.6 mΩ typ (at VGS = –10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1 234 REJ03G1155-0700 (Previous: ADE-208-1534E) Rev.7.00 Sep 07, 2005 5 D SSS 123 1, 2, 3 4 5 Source Gate Drain Rev.7.00 Sep 07, 2005 page 1 of 6 HAT1072H Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Value –30 –20 / +10 –40 –160 –40 30 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min –30 — — –0.5 — — 36 — — ...