IXTH30N50

www.DataSheet4U.com MegaMOSTMFET N-Channel Enhancement Mode IXTH 30N50 VDSS = 500 V 30 A ID (cont) = RDS(on) = 0.17 Ω Symbol V DSS V DGR VGS VGSM ID25 IDM PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 30 120 360 -55 ... +150 150 -55 ... +150 V V V V A A W °C °C °C °C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. 6 g Features z International standard package JEDEC TO-247 AD z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 .087 2 -0.25 ± 100 TJ = 25°C TJ = 125°C 200 3 0.17 4 V %/k V %/k nA µA mA Ω Applications z V DSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 5 mA BVDSS temperature coefficient VDS = VGS, ID = 250 µA VGS(th) temperature coefficient VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V z z z Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages z VGS = 10 V, ID = 0.5 ID25 30N50 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % z z Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density © 2002 IXYS All rights reserved 94569-E (8/02) www.Da...