IXTH3N120

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA3N120 IXTP3N120 IXTH3N120 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 3 12 3 700 5 200 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-247 & TO-220) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1200 V VGS(th) VDS = VGS, ID = 250A 2.5 5.0 V IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V TJ = 125C 25 A 1 mA RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 4.5  VDSS = ID25 =  RDS(on) 1200V 3A 4.5 TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) GD S TO-247 (IXTH) D (Tab) G D S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  International Standard Packages  High Voltage Package  Fast Intrinsic Diode  Avalanche Rated  Molding Epoxies meet UL 94 V-0 Flammability Classification  High Blocking Voltage Advant...