Final Datasheet
FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
August 2014
FDFS6N754
Integrated...
Final Datasheet
FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and
Schottky Diode
August 2014
FDFS6N754
Integrated N-Channel PowerTrench® MOSFET and
Schottky Diode
30V, 4A, 56mΩ
Features
Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A
VF < 0.45V @ 2A VF < 0.28V @ 100mA
Schottky and MOSFET incorporated into single power surface mount SO-8 package
Electrically independent
Schottky and MOSFET pinout for design flexibility
Low Gate Charge (Qg = 4nC)
Low Miller Charge
General Description
The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop
Schottky barrier rectifier in an SO8 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC converter topologies.
Applications
DC/DC converters
D D
C C
A1 A2
8C 7C
SO-8
Pin 1
G S
A A
S3 G4
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS
ID
Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Pulsed
Parameter
(Note 1a)
Power Dissipation for Dual Operation
PD
Power Dissipation for Single Operation
(Note 1a)
VRRM IO TJ, TSTG
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current Operating and Storage Temperature
(Note 1a)
...