Document
www.DataSheet4U.com
FDPF12N35 350V N-Channel MOSFET
UniFET
FDPF12N35
350V N-Channel MOSFET Features
• 7.5A, 350V, RDS(on) = 0.38Ω @VGS = 10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 15 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
February 2006 TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
{
z
D
G { GD S
z z
TO-220F
FDPF Series
{
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
FDPF12N35
350 7.5 4.5 30 ±30 335 7.5 5 4.5 50 0.35 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/°C °C °C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Min.
---
Max.
2.5 62.5
Unit
°C/W °C/W
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDPF12N35 Rev. A
www.DataSheet4U.com
FDPF12N35 350V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDPF12N35
Device
FDPF12N35
Package
TO-220F
TC = 25°C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics
Symbol
Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 350V, VGS = 0V VDS = 280V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 3.75A VDS = 40V, ID = 3.75A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
350 -----3.0 ------
Typ.
-0.35 -----0.32 13 855 135 15 30 180 35 60 18 5 8
Max Units
--1 10 100 -100 5.0 0.38 -1110 175 25 70 370 80 130 2.