FDPF15N65

FDPF15N65 — N-Channel UniFETTM MOSFET FDPF15N65 N-Channel UniFETTM MOSFET 650 V, 15 A, 440 mΩ Features RDS(on) = 360 mΩ (Typ.) @ VGS = 10 V, ID = 7.5 A Low Gate Charge (Typ. 48.5 nC) Low Crss (Typ. 23.6 pF) 100% Avalanche Tested Applications LCD/LED/PDP TV and Monitor Uninterruptible Power Supply November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D GDS G TO-220F S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) VGSS EAS IAR EAR dv/dt Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 2) (Note 1) (Note 1) (Note 3) PD Power Dissipation (TC = 25°C) - Derate Above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction termperature. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resi...