N-Channel MOSFET. FDPF44N25 Datasheet

FDPF44N25 Datasheet PDF, Equivalent


Part Number

FDPF44N25

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDPF44N25 Datasheet PDF


FDPF44N25 Datasheet
www.DataSheet4U.com
FDPF44N25
250V N-Channel MOSFET
Features
• 18A, 250V, RDS(on) = 0.069@VGS = 10 V
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
UniFET TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
GD S
TO-220F
FDPF Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
S
FDPF44N25
250
18
10.8
72
±30
2055
18
5.6
4.5
56
0.45
-55 to +150
300
Min.
--
--
Max.
2.23
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FDPF44N25 Rev A
1
www.fairchildsemi.com

FDPF44N25 Datasheet
www.DataSheet4U.com
Package Marking and Ordering Information
Device Marking
FDPF44N25
Device
FDPF44N25T
FDPF44N25
FDPF44N25
Package
TO-220F
Potting Type
TO-220F
Reel Size
--
--
Tape Width
--
--
Quantity
50
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250µA
ID = 250µA, Referenced to 25°C
VDS = 250V, VGS = 0V
VDS = 200V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
250
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 9A
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 9A
(Note 4)
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 125V, ID = 44A
RG = 25
VDS = 200V, ID = 44A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 18A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 44A
dIF/dt =100A/µs
(Note 4)
--
--
--
--
--
Typ.
--
0.25
--
--
--
--
--
0.058
32
2210
450
60
53
402
85
112
47
18
24
--
--
--
195
1.8
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
5.0
0.069
--
V
S
2870
585
90
pF
pF
pF
117 ns
814 ns
179 ns
234 ns
61 nC
-- nC
-- nC
18 A
72 A
1.4 V
-- ns
-- µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10.1mH, IAS = 18A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 18A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDPF44N25 Rev A
2 www.fairchildsemi.com


Features Datasheet pdf www.DataSheet4U.com FDPF44N25 250V N-Ch annel MOSFET UniFET FDPF44N25 250V N-C hannel MOSFET Features • 18A, 250V, R DS(on) = 0.069Ω @VGS = 10 V • Low g ate charge ( typical 47 nC) • Low Crs s ( typical 60 pF) • Fast switching 100% avalanche tested • Improved d v/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using F airchild’s proprietary, planar stripe , DMOS technology. This advanced techno logy has been especially tailored to mi nimize on-state resistance, provide sup erior switching performance, and withst and high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switche d mode power supplies and active power factor correction. D G GD S TO-220F FDPF Series S Absolute Maximum Rating s Symbol VDSS ID IDM VGSS EAS IAR EAR d v/dt PD TJ, TSTG TL Drain-Source Voltag e Drain Current Drain Current Gate-Sour ce voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanch.
Keywords FDPF44N25, datasheet, pdf, Fairchild Semiconductor, N-Channel, MOSFET, DPF44N25, PF44N25, F44N25, FDPF44N2, FDPF44N, FDPF44, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)