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FDP79N15 / FDPF79N15 150V N-Channel MOSFET
UniFET
FDP79N15 / FDPF79N15
150V N-Channel MOSFET
Featu...
www.DataSheet4U.com
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
UniFET
FDP79N15 / FDPF79N15
150V N-Channel MOSFET
Features
79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V Low gate charge ( typical 56 nC) Low Crss ( typical 96pF) Fast switching Improved dv/dt capability
May 2006
TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G G DS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
FDP79N15
79 50 316
FDPF79N15
150 79* 50* 316*
Unit
V A A A V mJ A mJ V/ns
± 30 1669 79 46.3 4.5 463 3.7 -55 to +150 300 31 0.25
W W/°C °C °C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
*Dr...