MT3S41FS

www.DataSheet4U.com MT3S41FS TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S41FS VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION 0.35±0.05 0.15±0.05 1.0±0.05 0.8±0.05 Unit:mm 0.2±0.05 FEATURES · High Gain:|S21e| =10.0dB (@f=2GHz) 2 0.6±0.05 · Low Noise Figure :NF=1.2dB (@f=2GHz) 1 3 0.1±0.05 Marking 2 3 0.1±0.05 2 26 1 +0.02 0.48 -0.04 Symbol VCBO VCEO VEBO IC IB PC(Note) Tj Tstg Rating 8 4.5 1.5 80 40 100 150 −55~150 2 Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Unit V V V mA mA mW °C °C 0.1±0.05 1.BASE 2.EMITTER 3.COLLECTOR fSM JEDEC JEITA TOSHIBA Weight: 0.0006 g 2-1E1A Note: Device mounted on a glass-epoxy PCB(0.88 cm ×0.7 mm (t)) 1 2003-02-14 www.DataSheet4U.com MT3S41FS Microwave Characteristics (Ta = 25°C) Characteristics Transition Frequency Insertion Gain Symbol fT |S21e| (1) |S21e| (2) NF(1) NF(2) 2 2 Test Condition VCE=3V, IC=20mA, f=2GHz VCE=3V, IC=20mA, f=1GHz VCE=3V, IC=20mA, f=2GHz VCE=3V, IC=5mA, f=1GHz VCE=3V, IC=5mA, f=2GHz Min 11 13.5 8 - Typ. 15 15.5 10 0.8 1.2 Max 1.8 Unit GHz dB dB dB dB Noise Figure Electrical Characteristics (Ta = 25°C) Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Output Capacitance Reverse Transistor Capacitance Symbol ICBO IEBO hFE Cob Cre Test Condition VCB=8V, IE=0 VEB=1V, IC=0 ...