MT3S41T

www.DataSheet4U.com MT3S41T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S41T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES · · Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e| =10dB (@f=2GHz) 2 Marking 3 Q7 1 2 TESM JEDEC JEITA Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 80 40 100 150 −55~150 Unit V V V mA mA mW °C °C Maximum Ratings (Ta = 25°C) ― ― 2-1B1A TOSHIBA Weight:0.0022g (typ.) 1 2002-08-19 www.DataSheet4U.com MT3S41T Microwave Characteristics (Ta = 25°C) Characteristics Transition Frequency Insertion Gain Symbol fT |S21e| (1) |S21e| (2) NF(1) NF(2) 2 2 Test Condition VCE=3V, IC=20mA, f=2GHz VCE=3V, IC=20mA, f=1GHz VCE=3V, IC=20mA, f=2GHz VCE=3V, IC=5mA, f=1GHz VCE=3V, IC=5mA, f=2GHz Min 11 13.5 8 - Typ. 15 15.5 10 0.8 1.2 Max 1.8 Unit GHz dB dB dB dB Noise Figure Electrical Characteristics (Ta = 25°C) Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Output Capacitance Reverse Transistor Capacitance Symbol ICBO IEBO hFE Cob Cre Test Condition VCB=8V, IE=0 VEB=1V, IC=0 VCE=3V, IC=20mA VCB=1V, IE=0, f=1MHz VCB=1V, IE=0, f=1MHz (Note 1) Min 70 Typ. 0.9 0.55 Max 1 1 140 1.4 0.9 Unit µA µA pF pF Note 1: Cre is measured by 3 terminal method with capacitance bridge. Caution: ...