RN1310

www.DataSheet4U.com RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1310,RN1311 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2310, RN2311 Unit: mm Equivalent Circuit Maximum Ratings (Ta = 25°C) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 5 100 100 150 −55~150 Unit V V V mA mW °C °C JEDEC EIAJ TOSHIBA Weight: 0.006g ― SC-70 2-2E1A Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Translation frequency Collector output capacitance Input resistor RN1310 RN1311 Symbol ICBO IEBO hFE VCE (sat) fT Cob R1 Test Circuit ― ― ― ― ― ― ― Test Condition VCB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1mA IC = 5mA, IB = 0.25mA VCE = 10V, IC = 5mA VCB = 10V, IE = 0, f = 1MHz ― Min ― ― 120 ― ― ― 3.29 7 Typ. ― ― ― 0.1 250 3 4.7 10 Max 100 100 700 0.3 ― 6 6.11 13 Unit nA nA ― V MHz pF kΩ 1 2001-06-07 www.DataSheet4U.com RN1310,RN1311 2 2001-06-07 www.DataSheet4U.com RN1310,RN1311 3 2001-06-07 www.DataSheet4U.com RN1310,RN1311 Type Name Marking RN1310 RN1311 4 2001-06-07 www.DataSheet4U.com...