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RN1312,RN1313
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1312,RN1313
Switching,...
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RN1312,RN1313
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
RN1312,RN1313
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2312, RN2313 Unit: mm
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 100 100 150 125 −55~125 Unit V V V mA mA mW °C °C
JEDEC EIAJ TOSHIBA Weight: 0.006g
― SC-70 2-2E1A
Electrical Characteristics (Ta = 25°C)
Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Input resistor RN1312 RN1313 Symbol ICBO IEBO hFE VCE (sat) fT Cob R1 Test Circuit ― ― ― ― ― ― ― Test Condition VCB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1mA IC = 5mA, IB = 0.25mA VCE = 10V, IC = 5mA VCB = 10V, IE = 0, f = 1MHz ― Min ― ― 120 ― ― ― 15.4 32.9 Typ. ― ― ― 0.1 250 3 22 47 Max 100 100 700 0.3 ― 6 28.6 61.1 V MHz pF kΩ Unit nA nA
1
2001-06-07
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RN1312,RN1313
2
2001-06-07
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RN1312,RN1313
3
2001-06-07
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RN1312,RN1313
Type Name Marking
RN1312
RN1313
4
2001-06-0...