N-Channel MOSFET
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SUM85N03-07P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMM...
Description
www.DataSheet4U.com
SUM85N03-07P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (W)
0.007 @ VGS = 10 V 0.010 @ VGS = 4.5 V
ID (A)
85 71
D D D D
TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency New Package with Low Thermal Resistance
APPLICATIONS
D Buck Converter - High Side - Low Side D Synchronous Rectifier - Secondary Rectifier
D
TO-263
G
G
D S S N-Channel MOSFET
Top View SUM85N03-07P
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 100_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
30 "20 85 60 200 45 101 93b 3.75 - 55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mountc J Junction-to-Ambient ti t A bi t Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 72036 S-03919—Rev. A, 19-May-03 www.vishay.com Free Air RthJA RthJC
Symbol
Limit
40 62.5 1.6
Unit
_C/W
1
www.DataSheet4U.com
SUM85N03-07P
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-B...
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