MHL9838N

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHL9838N Rev. 7, 8/2006 Cellular Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA and CDMA. Third Order Intercept: 50 dBm Typ Power Gain: 31 dB Typ (@ f = 880 MHz) Input and Output VSWR v 1.5:1 Features Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications For Use in TDMA and CDMA Multi - Carrier Applications N Suffix Indicates Lead - Free Terminations MHL9838N 800 - 925 MHz 8.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +6 - 40 to +100 - 20 to +100 Unit Vdc dBm °C °C Table 2. Electrical Characteristics (VDD = 28 Vdc, TC = 25°C; 50 Ω System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Compression (f = 880 MHz) (f = 800 - 925 MHz) (f = 880 MHz) Symbol IDD Gp GF P1dB ITO NF Min — 29.5 — — 49 — Typ 770 31 0.1 39 50 3.7 Max 800 32.5 0.3 — — 4.5 Unit mA dB dB dBm dBm dB Thir...