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STTH8R03D

ST Microelectronics

HYPERFAST RECTIFIER

www.DataSheet4U.com ® STTH8R03G/D 300V HYPERFAST RECTIFIER MAJOR PRODUCT CHARACTERISTICS K IF(AV) VRRM IRM (typ.) Tj...


ST Microelectronics

STTH8R03D

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www.DataSheet4U.com ® STTH8R03G/D 300V HYPERFAST RECTIFIER MAJOR PRODUCT CHARACTERISTICS K IF(AV) VRRM IRM (typ.) Tj (max) VF (max) trr (max) FEATURES AND BENEFITS s 8A 300 V 4A 175 °C 1.3 V 30 ns K A TO-220AC STTH8R03D s s Designed for high frequency applications. Hyperfast recovery competes with GaAs devices. Allows size decrease of snubbers and heatsinks. K DESCRIPTION The TURBOSWITCH "R" is an ultra high performance diode. This TURBOSWITCH family, which drastically cuts losses in associated MOSFET when run at high dIF/dt, is suited for HF OFF-Line SMPS and DC/DC converters. NC A D2PAK STTH8R03G ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 140°C δ = 0.5 tp = 10 ms sinusoidal Value 300 20 8 80 - 65 + 175 + 175 Unit V A A A °C °C February 2001 - Ed: 1H 1/6 STTH8R03G/D THERMAL AND POWER DATA Symbol Rth (j-c) Junction to case Parameter Value 2.5 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests conditions VR = VRRM Tj = 25°C Tj = 125°C IF = 8 A Tj = 25°C Tj = 125°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.9 x IF(AV) + 0.05 IF2(RMS) 1.05 15 Min. Typ. Max. 10 100 1.8 1.3 V U...




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