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power MOSFET. 2SK3318 Datasheet

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power MOSFET. 2SK3318 Datasheet






2SK3318 MOSFET. Datasheet pdf. Equivalent




2SK3318 MOSFET. Datasheet pdf. Equivalent





Part

2SK3318

Description

Silicon N-channel power MOSFET



Feature


www.DataSheet4U.com Power MOSFETs 2SK3 318 Silicon N-channel power MOSFET (0.7 ) Unit: mm 15.0±0.3 11.0±0.2 5.0±0. 2 (3.2) For switching ■ Features • Avalanche energy capability guaranteed • High-speed switching • Low ON re sistance Ron • No secondary breakdown 21.0±0.5 φ 3.2±0.1 (3.5) Solder Dip 15.0±0.2 2.0±0.2 1.1±0.1 2.0 0.1 0.6±0.2 ■ Absolute Maximum Ratin.
Manufacture

Panasonic Semiconductor

Datasheet
Download 2SK3318 Datasheet


Panasonic Semiconductor 2SK3318

2SK3318; gs TC = 25°C Parameter Drain-source sur render voltage Gate-source surrender vo ltage Drain current Peak drain current Avalanche energy capability * Power dis sipation Ta = 25°C Tch Tstg Symbol VDS S VGSS ID IDP EAS PD Rating 600 ±30 ± 15 ±60 112.5 100 3 150 −55 to +150 C °C Unit V V A A mJ W 16.2±0.5 5. 45±0.3 10.9±0.5 1 2 3 1: Gate 2: Dra in 3: Source TOP-3F-A1 Package.


Panasonic Semiconductor 2SK3318

Internal Connection D G S Conditions Min 600 −1.5 2 4 10 ±1 0.33 6 10 3 5 00 340 50 0.46 Typ Max Unit V V V µA A Ω S pF pF pF ns ns ns ns 1.25 41.7 °C/W °C/W Channel temperature Stora ge temperature Note) *: L = 1 mH, IL = 15 A, 1 pulse ■ Electrical Character istics TC = 25°C ± 3°C Parameter Gat e-drain surrender voltage Diode forward voltage Gate threshold voltage .


Panasonic Semiconductor 2SK3318

Drain-source cutoff current Gate-source cutoff currentt Drain-source on resista nce Forward transfer admittance Short-c ircuit forward transfer capacitance (Co mmon-source) Short-circuit output capac itance (Common-source) Reverse transfer capacitance (Common-source) Turn-on de lay time Rise time Turn-off delay time Fall time Channel-case heat resistance Channel-atmosphere.

Part

2SK3318

Description

Silicon N-channel power MOSFET



Feature


www.DataSheet4U.com Power MOSFETs 2SK3 318 Silicon N-channel power MOSFET (0.7 ) Unit: mm 15.0±0.3 11.0±0.2 5.0±0. 2 (3.2) For switching ■ Features • Avalanche energy capability guaranteed • High-speed switching • Low ON re sistance Ron • No secondary breakdown 21.0±0.5 φ 3.2±0.1 (3.5) Solder Dip 15.0±0.2 2.0±0.2 1.1±0.1 2.0 0.1 0.6±0.2 ■ Absolute Maximum Ratin.
Manufacture

Panasonic Semiconductor

Datasheet
Download 2SK3318 Datasheet




 2SK3318
www.DataSheet4U.com
Power MOSFETs
2SK3318
Silicon N-channel power MOSFET
For switching
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
Features
Avalanche energy capability guaranteed
High-speed switching
Low ON resistance Ron
No secondary breakdown
φ 3.2±0.1
2.0±0.2
2.0±0.1
Absolute Maximum Ratings TC = 25°C
1.1±0.1
0.6±0.2
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability *
Power
dissipation
Ta = 25°C
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
EAS
PD
Tch
Tstg
Rating
600
±30
±15
±60
112.5
100
3
150
55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
5.45±0.3
10.9±0.5
123
1: Gate
2: Drain
3: Source
TOP-3F-A1 Package
Internal Connection
D
G
Note) *: L = 1 mH, IL = 15 A, 1 pulse
Electrical Characteristics TC = 25°C ± 3°C
S
Parameter
Symbol
Conditions
Min Typ Max Unit
Gate-drain surrender voltage
Diode forward voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common-source)
Short-circuit output capacitance
(Common-source)
Reverse transfer capacitance
(Common-source)
VDSS
VDSF
Vth
IDSS
IGSS
RDS(on)
Yfs
Ciss
Coss
Crss
ID = 1 mA, VGS = 0
IDR = 15 A, VGS = 0
VDS = 25 V, ID = 1 mA
VDS = 480 V, VGS = 0
VGS = ±30 V, VDS = 0
VGS = 10 V, ID = 7.5 A
VDS = 25 V, ID = 7.5 A
VDS = 20 V, VGS = 0, f = 1 MHz
600
1.5
24
10
±1
0.33 0.46
6 10
3 500
V
V
V
µA
µA
S
pF
340 pF
50 pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Channel-case heat resistance
Channel-atmosphere heat resistance
td(on)
tr
td(off)
tf
Rth(ch-c)
Rth(ch-a)
VDD = 150 V, ID = 7.5 A
RL = 20 , VGS = 10 V
40 ns
55 ns
310 ns
70 ns
1.25 °C/W
41.7 °C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2004
SJG00040AED
1




 2SK3318
2SK3318
Safe operation area
103
Non repetitive pulse
TC = 25°C
102 IDP
t = 100 µs
ID
10
RDS(on) Limited
1 ms
1 10 ms
100 ms
DC
101
1
10 102 103
Drain-source voltage VDS (V)
120
(1)
100
PD Ta
(1) TC = Ta
(2) Without heat sink
PD = 3 W
80
60
40
20
(2)
0
0
50
100 150
Ambient temperature Ta (°C)
2 SJG00040AED




 2SK3318
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP



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