2SK3318

www.DataSheet4U.com Power MOSFETs 2SK3318 Silicon N-channel power MOSFET (0.7) Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 (3.2) For switching ■ Features Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron No secondary breakdown 21.0±0.5 φ 3.2±0.1 (3.5) Solder Dip 15.0±0.2 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 600 ±30 ±15 ±60 112.5 100 3 150 −55 to +150 °C °C Unit V V A A mJ W 16.2±0.5 5.45±0.3 10.9±0.5 1 2 3 1: Gate 2: Drain 3: Source TOP-3F-A1 Package Internal Connection D G S Conditions Min 600 −1.5 2 4 10 ±1 0.33 6 10 3 500 340 50 0.46 Typ Max Unit V V V µA µA Ω S pF pF pF ns ns ns ns 1.25 41.7 °C/W °C/W Channel temperature Storage temperature Note) *: L = 1 mH, IL = 15 A, 1 pulse ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Gate-drain surrender voltage Diode forward voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff currentt Drain-source on resistance Forward transfer admittance Short-circuit forward transfer capacitance (Common-source) Short-circuit output capacitance (Common-source) Reverse transfer capacitance (Common-source) Turn-on delay time Rise time Turn-off delay time Fall time Channel-case heat resistance Channel-atmosphere heat resistance Sym...