RADIATION HARDENED POWER MOSFET THRU-HOLE
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PD - 93827A
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number Radia...
Description
www.DataSheet4U.com
PD - 93827A
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level IRHY57230CM 100K Rads (Si) IRHY53230CM 300K Rads (Si) IRHY54230CM 600K Rads (Si) IRHY58230CM 1000K Rads (Si) RDS(on) 0.21Ω 0.21Ω 0.21Ω 0.26Ω ID 12.5A 12.5A 12.5A 12.5A
IRHY57230CM 200V, N-CHANNEL
4 #
TECHNOLOGY
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TO-257AA
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Ene...
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