RADIATION HARDENED POWER MOSFET THRU-HOLE
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PD - 91274D
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number Radia...
Description
www.DataSheet4U.com
PD - 91274D
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level IRHY7130CM 100K Rads (Si) IRHY3130CM 300K Rads (Si) IRHY4130CM 600K Rads (Si) IRHY8130CM 1000K Rads (Si) RDS(on) 0.18Ω 0.18Ω 0.18Ω 0.18Ω HEXFET® ID 14.4A 14.4A 14.4A 14.4A
IRHY7130CM JANSR2N7380 100V, N-CHANNEL REF: MIL-PRF-19500/614
RAD-Hard HEXFET TECHNOLOGY
™ ®
QPL Part Number
JANSR2N7380 JANSF2N7380 JANSG2N7380 JANSH2N7380
TO-257AA
International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Curre...
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