SI3850DV

www.DataSheet4U.com Specification Comparison Vishay Siliconix Si3850ADV vs. Si3850DV Description: Package: Pin Out: Complementary MOSFET Half-Bridge (N- and P-Channel) TSOP-6 Identical Part Number Replacements Si3850ADV-T1-E3 Replaces Si3850DV-T1-E3 Si3850ADV-T1-E3 Replaces Si3850DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TA = 25 °C Continuous Drain Current TA = 70 °C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25 °C TA = 70 °C IDM IS PD Tj and Tstg RthJA ID VDS VGS Symbol N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Si3850ADV 20 - 20 ± 12 ± 12 1.4 - 0.96 1.1 - 0.77 3.5 - 2.0 0.9 - 0.9 1.08 0.7 - 55 to 150 115 Si3580DV 20 - 20 ± 12 ± 12 1.2 - 0.85 0.95 - 0.65 3.5 - 2.5 1 -1 1.25 0.8 - 55 to 150 100 W °C °C/W A V Unit Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Document Number: 73853 Revision: 31-Oct-06 www.vishay.com 1 Specification Comparison Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current VGS = 4.5 V VGS = - 4.5 V VGS = 4.5 V VGS = - 4.5 V VGS = 3.0 V VGS = - 3.0 V VGS(th) IGSS IDSS ID(on) N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Ch 0.6 - 0....