S T U/D9410
S amHop Microelectronics C orp. P reliminary May.28 2004
N-C hannel E nhancement Mode Field E ffect Transis...
S T U/D9410
S amHop Microelectronics C orp. P reliminary May.28 2004
N-C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
www.DataSheet4U.com 30V
F E AT UR E S
( m W ) Max
ID
24A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
32 @ V G S = 10V 57 @ V G S = 4.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S DU S E R IE S TO-252AA(D-P AK)
S DD S E R IE S TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed
a
S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG
Limit 30 20 24 60 20 50 -55 to 175
Unit V V A A A W C
Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W
S T U/D9410
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current
www.DataSheet4U.com
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS
c
Condition
V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 7A V GS = 4.5V,ID = 3.5A V DS = 5V, V GS = 10V V DS = 5V, ID = 7A
Min Typ C Max Unit
30 1 V uA 100 nA 1 1.7 27 52 45 8 599 110 81 9.7 15.4 17.2 10.8...