TIM1011-2L

www.DataSheet4U.com TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz „ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz „ „ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE „ RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 G1dB VDS= 9V 6.5   Two Tone Test P=22dBm (Single Carrier Level) SYMBOL P1dB CONDITION MIN. TYP. MAX. UNIT 32.5 33.5 7.5 0.85 24 -45 0.85    1.1   1.1 80 dBm dB A % dBc A °C f =10.7-11.7GHz ηadd IM3 -42   VDS X IDS X Rth(c-c) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITION VDS= 3V IDS=1.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V IGS= -30µA Channel to Case MIN. TYP. MAX. UNIT  600  mS -2.0  -5  -3.5 2.0  5.0 -5.0 2.6  6.0 V A V °C/W ♦The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others...