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MRF6V2150N Dataheets PDF



Part Number MRF6V2150N
Manufacturers Motorola Semiconductor
Logo Motorola Semiconductor
Description RF Power Field Effect Transistor
Datasheet MRF6V2150N DatasheetMRF6V2150N Datasheet (PDF)

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power.

  MRF6V2150N   MRF6V2150N



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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain — 25.5 dB Drain Efficiency — 69% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 150 Watts Output Power • Integrated ESD Protection • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniques • 225°C Capable Plastic Package • RoHS Compliant MRF6V2150N MRF6V2150NB PREPRODUCTION 10 - 450 MHz, 150 W, 50 V LATERAL N - CHANNEL SINGLE - ENDED BROADBAND RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6V2300N CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6V2300NB PARTS ARE SINGLE - ENDED Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TJ Value - 0.5 +110 - 0.5 + 12 - 65 to +150 225 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature TBD°C, TBD W CW Case Temperature TBD°C, TBD W CW Symbol RθJC Value (3) TBD TBD Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. (Calculator available when part is in production.) 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. This document contains information on a preproduction product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6V2150N MRF6V2150NB 1 RF Device Data Freescale Semiconductor DataSheet 4 U .com www.DataSheet4U.com Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class TBD (Minimum) TBD (Minimum) TBD (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 110 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Drain - Source Breakdown Voltage (ID = 75 mA, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 50 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance (VDS = 50 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point, CW (f = 220 MHz) Crss Coss Ciss — — — 1.54 94 163 — — — pF pF pF VGS(th) VDS(on) — — 2.4 0.3 — — Vdc Vdc IDSS IDSS BVDSS IGSS — — 110 — — — — — 10 10 — 10 μAdc μAdc Vdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 οhm system) VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W, f = 220 MHz, CW Gps ηD IRL P1dB — — — — 25.5 69 - 17 165 — — — — dB % dB W ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. MRF6V2150N MRF6V2150NB 2 RF Device Data Freescale Semiconductor DataSheet 4 U .com www.DataSheet4U.com TYPICAL CHARACTERISTICS 27 26 Gps, POWER GAIN (dB) Gps 25 24 23 22 21 20 0 50 100 150 200 Pout, OUTPUT POWER (WATTS) CW ηD VDD = 50 Vdc IDQ = 450 mA f = 220 MHz 80 70 ηD, DRAIN EFFICIENCY (%) 60 50 40 30 20 10 Gps, POWER GAIN (dB) 27 26 25 24 23 22 21 20 0 50 100 150 200 Pout, OUTPUT POWER (WATTS) CW VDD = 50 Vdc f = 220 MHz 360 mA 405 mA IDQ = 495 mA 540 mA 450 mA Figure 1. Power Gain and Drain Efficiency versus CW Output Power Figure 2. Power Gain versus Output Power −20 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −25 55 85_C Pout, OUTPUT POWER (dBm) −30_C 50 25_C −30 IM3 −U −35 IM3 −L VDD = 50 Vdc, IDQ = 450 mA f1 = 220 MHz, f2 = 220.1 MHz Two −Tone Measurements 0 20 40 60 80 100 45 −40 −4.


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