RB051LA-40

www.DataSheet4U.com RB051LA-40 Diodes Schottky barrier diode RB051LA-40 zApplications General rectification zFeatures 1) Small and Thin power type (PMDT) 2) High reliability. 3) Low IR zExternal dimensions (Unit : mm) 1.5±0.2 CATHODE MARK zLand size figure (Unit : mm) 0.2± 0.15 0.1 2.0 mold 4.7±0.3 1.4 3.8±0.2 zStructure Silicon epitaxial planar ROHM : PMDＴ PMDＴ 2.6±0.2 0.95±0.1 zStructure zTaping dimensions (Unit : mm) 2.0±0.05 4.0±0.1 1.75±0.1 φ1.55±0.1 　　　　　 0 0.25±0.05 1.4 5.5±0.05 12.0±0.2 φ1.55±0.1 　　　　　 0 2.7±0.1 4.0±0.1 1.25±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Limits Symbol 40 VRM 20 VR 3.0 Io IFSM 70 125 Tj -40 to +125 Tstg (*1) Alumina substrate at the time of assemble, TL=90℃ max. 5.0±0.1 Unit V V A A ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR1 IR2 Min. - Typ. - Max. 0.35 0.45 1 150 Unit V V mA µA Conditions IF=1A IF=3A VR=20V VR=15V 5.0±0.1 4.4 1/3 RB051LA-40 Diodes zElectrical characteristic curves 10 Ta=75℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1 Ta=125℃ Ta=25℃ Ta=-25℃ 1000000 100000 10000 1000 100 10 1 0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF...