XN0F261

www.DataSheet4U.com Composite Transistors XN0F261 Silicon NPN epitaxial planar type Unit: mm For muting ■ Features Two elements incorporated into one package (Collector-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 3 2 1 0.30+0.10 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 5 600 300 150 −55 to +150 Unit V V V mA mW °C °C 0.50+0.10 –0.05 10˚ 1.1+0.2 –0.1 (0.65) 1: Emitter (Tr1) 2: Collector 3: Emitter (Tr2) EIAJ: SC-74 0 to 0.1 Marking Symbol: 6B Internal Connection 4 5 6 Tr2 3 2 1.1+0.3 –0.1 4: Base (Tr2) 5: N.C. 6: Base (Tr1) Mini6-G1 Package Tr1 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Input resistance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) R1 fT VCB = 10 V, IE = −50 mA, f = 200 MHz Conditions IC = 1 µA, IE = 0 IC = 1 mA, IB = 0 IE = 1 µA, IC...