ZXM41N0F

www.DataSheet4U.com ZXM41N0F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES BVDSS = 100V Low Threshold DEVICE MARKING 410 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Drain-gate voltage Continuous drain current at T amb =25°C Pulsed drain current Gate-source voltage Power dissipation at T amb =25°C Operating and storage temperature range PINOUT TOP VIEW SYMBOL V DS V DGR ID I DM V GS P tot T j :T stg VALUE 100 100 170 680 ± 20 360 -55 to +150 SOT23 UNIT V V mA mA V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Drain-source breakdown voltage Gate-source threshold voltage Gate-body leakage Zero gate voltage drain current Static drain-source on-state resistance (1) Forward transconductance (1)(2) Input capacitance (2) Common source output capacitance (2) Reverse transfer capacitance (2) Turn-on delay time Rise time (2)(3) (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf 80 100 0.5 TYP. MAX. UNIT CONDITIONS V I D =0.25mA, V GS =0V I =1mA, V DS = V GS D 1.5 50 500 8 12 V nA nA ⍀ ⍀ mS V GS = ± 20V , V DS =0V V DS =100V, V GS =0V V GS =4.5V, I D =150mA V GS =3V, I D =50mA V DS =25V, I D =100mA 25 9 4 10 10 15 25 pF pF pF ns ns ns ns V DD ≈ 30V, I D =280mA V DS =25V, V GS =0V, f=1MHz Turn-off delay time (2)(3) Fall time (2)(3) NOTES: (1) Measured under pulsed conditions. Width=300µs. Duty cycle Յ2% (2) Sample test. (3) Switching times measured wit...