BLC6G20-140 transistor Datasheet

BLC6G20-140 Datasheet PDF, Equivalent


Part Number

BLC6G20-140

Description

UHF power LDMOS transistor

Manufacture

Philips

Total Page 9 Pages
Datasheet
Download BLC6G20-140 Datasheet


BLC6G20-140
www.DataSheet4U.com
BLC6G20-140; BLC6G20LS-140
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1: Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation f
VDS PL(AV)
Gp ηD IMD3
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA 1930 to 1990 28 35.5
16.5 31
37 [1]
ACPR
(dBc)
40 [1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an IDq of 1000 mA:
x Average output power = 35.5 W
x Power gain = 16.5 dB (typ)
x Efficiency = 31 %
x IMD3 = 37 dBc
x ACPR = 40 dBc
s Easy power control
s Integrated ESD protection
s Excellent ruggedness
s High efficiency
s Excellent thermal stability
s Designed for broadband operation (1800 MHz to 2000 MHz)
s Internally matched for ease of use

BLC6G20-140
Philips Semiconductors
BLC6G20-140; BLC6G20LS-140
UHF power LDMOS transistor
1.3 Applications
s RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 1800 MHz to 2000 MHz frequency range.
2. Pinning information
Table 2: Pinning
Pin Description
BLC6G20-140 (SOT895-1)
1 drain
2 gate
3 source
BLC6G20LS-140 (SOT896-1)
1 drain
2 gate
3 source
[1] Connected to flange
3. Ordering information
Simplified outline Symbol
11
3
[1]
22
3
sym112
1
3
[1]
2
1
2
3
sym112
Table 3: Ordering information
Type number Package
Name Description
Version
BLC6G20-140 -
plastic flanged cavity package; 2 mounting slots; 2 leads SOT895-1
BLC6G20LS-140 -
plastic earless flanged cavity package; 2 leads
SOT896-1
4. Limiting values
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 65 V
0.5 +13 V
- <tbd> A
65 +150 °C
- 225 °C
BLC6G20-140_6G20LS-140_1
Objective data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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Features www.DataSheet4U.com BLC6G20-140; BLC6G2 0LS-140 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transisto r for base station applications at freq uencies from 1800 MHz to 2000 MHz. Tabl e 1: Typical performance RF performance at Tcase = 25 °C in a common source c lass-AB production test circuit. Mode o f operation 2-carrier W-CDMA [1] f (MH z) 1930 to 1990 VDS (V) 28 PL(AV) (W) 35.5 Gp (dB) 16.5 ηD (%) 31 IMD3 ( dBc) −37 [1] ACPR (dBc) −40 [1] T est signal: 3GPP; test model 1; 64 DPCH ; PAR = 7 dB at 0.01 % probability on C CDF per carrier; carrier spacing 10 MHz . CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefor e care should be taken during transport and handling. 1.2 Features s Typical 2-carrier W-CDMA performance at frequen cies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 mA: x Average output power = 35.5 W x Power gain = 16.5 dB (typ) x Efficiency.
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