HAT2198R

HAT2198R Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.2 mΩ typ. (at VGS = 10 V) Outline SOP-8 5 678 D DDD 4 G SS S 12 3 8 7 65 1 234 REJ03G0062-020 Rev.2.0 6HS.8.20 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current Drain peak current ID ID(pulse)Note1 14 112 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance IDR IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 14 14 19.6 2.5 50 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C Rev.2.0, 6HS..20, page 1 of 7 HAT2198R Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 30 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Gate to source cutoff voltage VGS(off) 1.0 Static drain to source on state resistance RDS(on) — RDS(on) — Forward transfer admittance |yfs| 18 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Gate Resistance Rg — Tota...