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PBSS8110S

NXP

NPN low VCEsat (BISS) transistor

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PBSS8110S 100 V, 1 A NPN low VCEsat (BI...


NXP

PBSS8110S

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PBSS8110S 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Nov 11 2004 Aug 13 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor FEATURES SOT54 package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency leading to less heat generation. APPLICATIONS Automotive 42 V power Telecom infrastructure General industrial applications Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. Peripheral drivers – Generic driver (e.g. lamps and LEDs) – Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION NPN low VCEsat BISS transistor in a SOT54 plastic package. MARKING TYPE NUMBER PBSS8110S ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS8110S − DESCRIPTION MARKING CODE S8110S 1 handbook, halfpage 2 3 PBSS8110S QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 100 1 3 200 UNIT V A A mΩ 2 1 3 MAM259 Fig.1 Simplified outline (SOT54) and symbol. VERSION SOT54 plastic single-ended leaded (through hole) package; 3 leads 2004 Aug 13 2 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor LIMITING V...




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