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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PBSS8110S 100 V, 1 A NPN low VCEsat (BI...
www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PBSS8110S 100 V, 1 A
NPN low VCEsat (BISS)
transistor
Product specification Supersedes data of 2003 Nov 11 2004 Aug 13
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS)
transistor
FEATURES SOT54 package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency leading to less heat generation. APPLICATIONS Automotive 42 V power Telecom infrastructure General industrial applications Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. Peripheral drivers – Generic driver (e.g. lamps and LEDs) – Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION
NPN low VCEsat BISS
transistor in a SOT54 plastic package. MARKING TYPE NUMBER PBSS8110S ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS8110S − DESCRIPTION MARKING CODE S8110S
1 handbook, halfpage 2 3
PBSS8110S
QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 100 1 3 200 UNIT V A A mΩ
2 1 3
MAM259
Fig.1 Simplified outline (SOT54) and symbol.
VERSION SOT54
plastic single-ended leaded (through hole) package; 3 leads
2004 Aug 13
2
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS)
transistor
LIMITING V...