PBSS8110Z

www.DataSheet4U.com PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 — 26 April 2004 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT223 (SC-73) package. 1.2 Features s s s s SOT223 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation. 1.3 Applications s Major application segments: x Automotive 42 V power x Telecom infrastructure x Industrial. s DC-to-DC converter s Peripheral driver x Driver in low supply voltage applications (e.g. lamps and LEDs) x Inductive load drivers (e.g. relays, buzzers and motors). 1.4 Quick reference data Table 1: Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance Conditions Min Typ Max 100 1 3 200 Unit V A A mΩ Philips Semiconductors PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1 2, 4 3 Discrete pinning Description base collector emitter 4 Simplified outline Symbol 2, 4 1 3 sym016 1 Top view 2 3 3. Ordering information Table 3: Ordering information Package Name PBSS8110Z Description plastic surface mounted package; collector pad for good heat transfer; 4 leads Version SOT223 Type number 4. Marking Table 4: Marking Marking code [1] PB8110 Type number PBSS8110Z [1] Made in Hong Kong. 9397 750 12568 © Koninklijke Philips Electron...