XN06214

www.DataSheet4U.com Composite Transistors XN06214 (XN6214) Silicon NPN epitaxial planar type Unit: mm For switching/digital circuits ■ Features Two elements incorporated into one package (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 3 2 1 0.30+0.10 –0.05 ■ Basic Part Number UNR2214 (UN2214) × 2 0.50+0.10 –0.05 10˚ 1.1+0.2 –0.1 (0.65) ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 300 150 −55 to +150 Unit V V mA mW °C °C 1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-74 0 to 0.1 Marking Symbol: AA Internal Connection 4 5 6 1.1+0.3 –0.1 4: Base (Tr2) 5: Emitter (Tr2) 6: Emitter (Tr1) Mini6-G1 Package Tr1 Tr2 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE ratio * Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE(Smal...